#Diodes Inc, #ZX3CD1S1M832TA, #IGBT_Module, #IGBT, ZX3CD1S1M832TA Small Signal Bipolar Transistor, 4A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, 3 X 2 MM, MINIATURE, MLP
Manufacturer Part Number: ZX3CD1S1M832TARohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: DIODES INCPackage Description: FLATPACK, R-PQFP-F10Pin Count: 10ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 5.84Case Connection: COLLECTORCollector Current-Max (IC): 4 ACollector-Emitter Voltage-Max: 12 VConfiguration: SINGLE WITH BUILT-IN DIODEDC Current Gain-Min (hFE): 45JESD-30 Code: R-PQFP-F10JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 10Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLATPACKPeak Reflow Temperature (Cel): 260Polarity/Channel Type: PNPPower Dissipation-Max (Abs): 3 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: FLATTerminal Position: QUADTime Small Signal Bipolar Transistor, 4A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, 3 X 2 MM, MINIATURE, MLP832, 10 PIN