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Diodes Inc ZXMC3A17DN8TA

  • ZXMC3A17DN8TA

ZXMC3A17DN8TA Small Signal Field-Effect Transistor, 5.4A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8; ZXMC3A17DN8TA

· Categories: IGBT
· Manufacturer: Diodes Inc
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 477
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Content last revised on May 23, 2023

Manufacturer Part Number: ZXMC3A17DN8TAPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCPart Package Code: SOICPackage Description: SMALL OUTLINE, R-PDSO-G8Pin Count: 8ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 0.86Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (ID): 5.4 ADrain-source On Resistance-Max: 0.05 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: MS-012AAJESD-30 Code: R-PDSO-G8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNEL AND P-CHANNELQualification Status: Not QualifiedSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Small Signal Field-Effect Transistor, 5.4A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8