#Diodes Inc, #ZXMD63P02XTC, #IGBT_Module, #IGBT, ZXMD63P02XTC Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconduc
Manufacturer Part Number: ZXMD63P02XTCRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCPart Package Code: MSOPPackage Description: SMALL OUTLINE, S-PDSO-G8Pin Count: 8ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 5.36Additional Feature: LOW THRESHOLDConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 20 VDrain Current-Max (ID): 1.7 ADrain-source On Resistance-Max: 0.27 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: MO-187AAJESD-30 Code: S-PDSO-G8JESD-609 Code: e3Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: SQUAREPackage Style: SMALL OUTLINEPolarity/Channel Type: P-CHANNELQualification Status: Not QualifiedSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTransistor Application: SWITCHINGTransistor Element Material: SILICON Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-187AA, MO-187, MSOP-8