#Diodes Inc, #ZXT10N50DE6TC, #IGBT_Module, #IGBT, ZXT10N50DE6TC Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin, SUPERSOT-6
Manufacturer Part Number: ZXT10N50DE6TCRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCPackage Description: SMALL OUTLINE, R-PDSO-G6Pin Count: 6ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 5.31Collector Current-Max (IC): 3 ACollector-Emitter Voltage-Max: 50 VConfiguration: SINGLEDC Current Gain-Min (hFE): 100JESD-30 Code: R-PDSO-G6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 6Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: NPNQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin, SUPERSOT-6