#Diodes Inc, #ZXTN4004KTC, #IGBT_Module, #IGBT, ZXTN4004KTC Power Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, GRE
Manufacturer Part Number: ZXTN4004KTCPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCPackage Description: SMALL OUTLINE, R-PSSO-G2ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 1.64Additional Feature: HIGH RELIABILITYCase Connection: COLLECTORCollector Current-Max (IC): 1 ACollector-Emitter Voltage-Max: 150 VConfiguration: SINGLEDC Current Gain-Min (hFE): 100JEDEC-95 Code: TO-252JESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: NPNPower Dissipation-Max (Abs): 3.8 WReference Standard: AEC-Q101Subcategory: Other TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime Power Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, GREEN, PLASTIC PACKAGE-3/2