#Diodes Inc, #ZXTS1000E6TA, #IGBT_Module, #IGBT, ZXTS1000E6TA Small Signal Bipolar Transistor, 1.25A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon,; ZXTS1000E6TA
Manufacturer Part Number: ZXTS1000E6TARohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCPackage Description: SMALL OUTLINE, R-PDSO-G6ECCN Code: EAR99HTS Code: 8541.21.00.75Manufacturer: Diodes IncorporatedRisk Rank: 1.21Collector Current-Max (IC): 1.25 ACollector-Emitter Voltage-Max: 12 VConfiguration: SINGLE WITH BUILT-IN DIODEDC Current Gain-Min (hFE): 30JESD-30 Code: R-PDSO-G6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 6Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: PNPPower Dissipation-Max (Abs): 0.885 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: MATTE TINTerminal Form: GULL WINGTerminal Position: DUALTime Small Signal Bipolar Transistor, 1.25A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon,