#FUJI, #6MBP75NA_060, #IGBT_Module, #IGBT, 6MBP75NA-060 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel; 6MBP75NA-060
Manufacturer Part Number: 6MBP75NA060-01Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPackage Description: FLANGE MOUNT, R-PUFM-X22Manufacturer: Fuji Electric Co LtdRisk Rank: 5.84Additional Feature: HIGH RELIABILITYCollector Current-Max (IC): 75 ACollector-Emitter Voltage-Max: 600 VConfiguration: COMPLEXJESD-30 Code: R-PUFM-X22Number of Elements: 6Number of Terminals: 22Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Nom (toff): 3600 nsTurn-on Time-Nom (ton): 300 ns Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel