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Mitsubishi CM900DUC-24NF IGBT Module

#Mitsubishi, #CM900DUC_24NF, #IGBT_Module, #IGBT, CM900DUC-24NF Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-9; CM900DU

· Categories: IGBT Module
· Manufacturer: Mitsubishi
· Price: US$ 179
· Date Code: 2024+
. Available Qty: 735
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CM900DUC-24NF Specification

Sell CM900DUC-24NF, #Mitsubishi #CM900DUC-24NF Stock, CM900DUC-24NF Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-9; CM900DUC-24NF, #IGBT_Module, #IGBT, #CM900DUC_24NF
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Manufacturer Part Number: CM900DUC-24NF

Rohs Code: Yes

Part Life Cycle Code: Active

Ihs Manufacturer: Mitsubishi ELECTRIC CORP

Package Description: FLANGE MOUNT, R-XUFM-X9

Pin Count: 9

ECCN Code: EAR99

Manufacturer: Mitsubishi Electric

Risk Rank: 5.72

Additional Feature: UL RECOGNIZED

Case Connection: ISOLATED

Collector Current-Max (IC): 900 A

Collector-Emitter Voltage-Max: 1200 V

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Gate-Emitter Voltage-Max: 20 V

JESD-30 Code: R-XUFM-X9

Number of Elements: 2

Number of Terminals: 9

Operating Temperature-Max: 150 °C

Package Body Material: UNSPECIFIED

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Peak Reflow Temperature (Cel): NOT SPECIFIED

Polarity/Channel Type: N-CHANNEL

Power Dissipation-Max (Abs): 5950 W

Qualification Status: Not Qualified

Subcategory: Insulated Gate BIP Transistors

Surface Mount: NO

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Time

Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-9

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