#Mitsubishi, #CM900DUC_24NF, #IGBT_Module, #IGBT, CM900DUC-24NF Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-9; CM900DU
Manufacturer Part Number: CM900DUC-24NF
Rohs Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: Mitsubishi ELECTRIC CORP
Package Description: FLANGE MOUNT, R-XUFM-X9
Pin Count: 9
ECCN Code: EAR99
Manufacturer: Mitsubishi Electric
Risk Rank: 5.72
Additional Feature: UL RECOGNIZED
Case Connection: ISOLATED
Collector Current-Max (IC): 900 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X9
Number of Elements: 2
Number of Terminals: 9
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 5950 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Time
Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-9