FUJI 6RI75G-160 IGBT Module

FUJI 6RI75G-160 is a power semiconductor module designed for use in high power industrial applications.

The module(6RI75G-160) features six insulated-gate bipolar transistor (IGBT) chips arranged in a three-phase bridge configuration, with each IGBT chip rated for a collector current 75A & collector-emitter voltage 1600V. This makes the module capable of handling a maximum continuous current of 450A & maximum peak current of 1200A.

The 6RI75G-160 module comes equipped with built-in protection features such as short-circuit protection, overcurrent protection, and thermal protection.

Manufacturer Part Number: #6RI75G-160

Package Description: R-XUFM-X5

Pin Count: 5

Manufacturer: Fuji Electric Co Ltd

Case Connection: ISOLATED

Configuration: BRIDGE, 6 ELEMENTS

Diode Element Material: SILICON

Diode Type: BRIDGE RECTIFIER DIODE

Forward Voltage-Max (VF): 1.3 V

JESD-30 Code: R-XUFM-X5

Non-rep Pk Forward Current-Max: 1000 A

Number of Elements: 6

Number of Phases: 3

Number of Terminals: 5

Operating Temperature-Max: 150 °C

Output Current-Max: 75 A

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Rep Pk Reverse Voltage-Max: 1600 V

Subcategory: Bridge Rectifier Diodes

Surface Mount: NO

Terminal Position: UPPER

Bridge Rectifier Diode 3 Phase 75A 1600V V(RRM) Silicon R606 5 PIN