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NXP BLF6G10LS-135R,BLF6G10LS-135R pictures,BLF6G10LS-135R supplier,BLF6G10LS-135R stock
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Datasheets:BLF6G10(LS)-135RProduct Photos:SOT502BPCN Assembly/Origin:RF Power Transistors Transfer 21/Dec/2013PCN Packaging:Date Code Extended 18/Jul/2013Standard Package:20Category:Discrete Semiconductor ProductsFamily:RF FETsSeries:-Packaging:TrayTransistor Type:LDMOSFrequency:871.5MHz ~ 891.5MHzGain:21dBVoltage - Test:28VCurrent Rating:32ANoise Figure:-Current - Test:950mAPower - Output:26.5WVoltage - Rated:65VPackage / Case:SOT-502BSupplier Device Package:SOT502BDynamic Catalog:RF HEMT HFET LDMOS FETsOther Names:568-8636934063207112BLF6G10LS-135RN:11-NDBLF6G10LS135RN11
NXP BLF6G10LS-135R New RF MOSFET Transistors LDMOS TNS , BLF6G10LS-135R pictures, BLF6G10LS-135R price, BLF6G10LS-135R supplier
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Product Category: RF MOSFET Transistors BLF6G10LS-135R
 
Manufacturer: NXP
 
RoHS: RoHS Compliant Details
 
Transistor Polarity: N-Channel
 
Id - Continuous Drain Current: 32 A
 
Vds - Drain-Source Breakdown Voltage: 65 V
 
Rds On - Drain-Source Resistance: 100 mOhms
 
Technology: Si
 
Maximum Operating Temperature: + 150 C
 
Mounting Style: SMD/SMT
 
Package / Case: SOT502B
 
Packaging: Tube
 
Brand: NXP Semiconductors
 
Channel Mode: Enhancement
 
Configuration: Single
 
Height: 4.72 mm
 
Length: 20.7 mm
 
Minimum Operating Temperature: - 65 C
 
Factory Pack Quantity: 20
 
Type: RF Power MOSFET
 
Vgs - Gate-Source Voltage: 13 V
 
Width: 9.91 mm
 
Part # Aliases: BLF6G10LS-135R,112

RF MOSFET Transistors LDMOS TNS

Shunlongwei Inspected every BLF6G10LS-135R before Ship, All BLF6G10LS-135R with 6 months warranty.
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