NXP BLF6G10LS-135R IGBT Module

Product Category:RF MOSFET TransistorsBLF6G10LS-135R

Manufacturer:NXP

RoHS: RoHS Compliant YES

Transistor Polarity:N-Channel

Id - Continuous Drain Current:32 A

Vds - Drain-Source Breakdown Voltage:65 V

Rds On - Drain-Source Resistance:100 mOhms

Technology:Si

Maximum Operating Temperature:+ 150 C

Mounting Style:SMD/SMT

Package / Case:SOT502B

Packaging:Tube

Brand:NXP Semiconductors

Channel Mode:Enhancement

Configuration:Single

Height:4.72 mm

Length:20.7 mm

Minimum Operating Temperature:- 65 C

Factory Pack Quantity:20

Type:RF Power MOSFET

Vgs - Gate-Source Voltage:13 V

Width:9.91 mm

Part # Aliases: BLF6G10LS-135R,112

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