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NXP BLF6G10LS-135R,BLF6G10LS-135R pictures,BLF6G10LS-135R supplier,BLF6G10LS-135R stock
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Datasheets:BLF6G10(LS)-135RProduct Photos:SOT502BPCN Assembly/Origin:RF Power Transistors Transfer 21/Dec/2013PCN Packaging:Date Code Extended 18/Jul/2013Standard Package:20Category:Discrete Semiconductor ProductsFamily:RF FETsSeries:-Packaging:TrayTransistor Type:LDMOSFrequency:871.5MHz ~ 891.5MHzGain:21dBVoltage - Test:28VCurrent Rating:32ANoise Figure:-Current - Test:950mAPower - Output:26.5WVoltage - Rated:65VPackage / Case:SOT-502BSupplier Device Package:SOT502BDynamic Catalog:RF HEMT HFET LDMOS FETsOther Names:568-8636934063207112BLF6G10LS-135RN:11-NDBLF6G10LS135RN11
NXP BLF6G10LS-135R New RF MOSFET Transistors LDMOS TNS , BLF6G10LS-135R pictures, BLF6G10LS-135R price, BLF6G10LS-135R supplier
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Product Category: RF MOSFET Transistors BLF6G10LS-135R
Manufacturer: NXP
RoHS: RoHS Compliant Details
Transistor Polarity: N-Channel
Id - Continuous Drain Current: 32 A
Vds - Drain-Source Breakdown Voltage: 65 V
Rds On - Drain-Source Resistance: 100 mOhms
Technology: Si
Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: SOT502B
Packaging: Tube
Brand: NXP Semiconductors
Channel Mode: Enhancement
Configuration: Single
Height: 4.72 mm
Length: 20.7 mm
Minimum Operating Temperature: - 65 C
Factory Pack Quantity: 20
Type: RF Power MOSFET
Vgs - Gate-Source Voltage: 13 V
Width: 9.91 mm
Part # Aliases: BLF6G10LS-135R,112


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