Infineon BSM100GB120DN2 IGBT Module

BSM100GB120DN2

Manufacturer: Infineon

Product Category: IGBT Modules

RoHS: YES

Brand: Infineon Technologies

Product: IGBT Silicon Modules

Configuration: Half Bridge

Collector- Emitter Voltage VCEO Max: 1200 V

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 150 A

Gate-Emitter Leakage Current: 200 nA

Pd - Power Dissipation: 800 W

Package / Case: Half Bridge2

Maximum Operating Temperature: + 150 C

Maximum Gate Emitter Voltage: 20 V

Minimum Operating Temperature: - 40 C

Mounting Style: Screw

Factory Pack Quantity: 10

IGBT: 100A1200V;IGBT Modules 1200V 100A DUAL