STMicroelectronics BTW69-1200N IGBT Module

Manufacturer Part Number: BTW69-1200NBrand Name: STMicroelectronicsPart Life Cycle Code: ActiveIhs Manufacturer: STMICROELECTRONICSECCN Code: EAR99HTS Code: 8541.30.00.80Manufacturer: STMicroelectronicsRisk Rank: 0.49Circuit Commutated Turn-off Time-Nom: 100 µsConfiguration: SINGLECritical Rate of Rise of Off-State Voltage-Min: 500 V/usDC Gate Trigger Current-Max: 80 mADC Gate Trigger Voltage-Max: 3 VHolding Current-Max: 150 mAJESD-30 Code: R-PSFM-T3Leakage Current-Max: 6 mANon-Repetitive Pk On-state Cur: 525 ANumber of Elements: 1Number of Terminals: 3On-state Current-Max: 40000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -45 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDQualification Status: Not QualifiedRMS On-state Current-Max: 55 ARepetitive Peak Off-state Voltage: 1200 VRepetitive Peak Reverse Voltage: 1200 VSubcategory: Silicon Controlled RectifiersSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime 50 A 1200 V SCR Thyristor in non-insulated TOP3