#MITSUBISHI, #FM30DY_10, #IGBT_Module, #IGBT, FM30DY-10 Power Field-Effect Transistor, 30A I(D), 500V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconducto
Manufacturer Part Number: FM30DY-10Part Life Cycle Code: ObsoleteIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-PUFM-X7Manufacturer: Mitsubishi ElectricRisk Rank: 5.83Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTORDS Breakdown Voltage-Min: 500 VDrain Current-Max (ID): 30 ADrain-source On Resistance-Max: 0.3 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X7Number of Elements: 2Number of Terminals: 7Operating Mode: DEPLETION MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 90 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 30A I(D), 500V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET