Fuji 2MBI150US-120-50 | A Workhorse 1200V IGBT for Robust Power Conversion
The Fuji Electric 2MBI150US-120-50 is an industry-proven half-bridge IGBT module engineered for reliability and balanced performance in demanding high-power applications. As a cornerstone of Fuji's U-Series IGBTs, this module delivers an optimized blend of low conduction losses and robust switching characteristics, making it a go-to choice for systems where efficiency and durability are paramount.
Core Engineering Highlights
- Voltage and Current Rating: Rated for 1200V and 150A, providing substantial headroom for industrial motor drives, UPS systems, and welding applications.
- U-Series Technology: Employs Fuji Electric's trench gate and field-stop (U-Series) technology, achieving an excellent trade-off between collector-emitter saturation voltage (Vce(sat)) and switching losses.
- Integrated FWD: Includes a soft-recovery, low-loss Free Wheeling Diode (FWD) co-packaged for simplified inverter design and improved performance under inductive loads.
- High Reliability Package: Housed in a standard, thermally efficient package designed for longevity and ease of mounting, ensuring effective heat dissipation.
Key Parameter Overview
For engineers requiring quick-reference data, the following table summarizes the critical performance characteristics of the 2MBI150US-120-50. For complete specifications, please refer to the official datasheet.
| Parameter | Typical Value |
|---|---|
| Collector-Emitter Voltage (VCES) | 1200V |
| Continuous Collector Current (IC) @ TC=80°C | 150A |
| Collector-Emitter Saturation Voltage (VCE(sat)) @ IC=150A, Tj=125°C | 2.2V |
| Total Power Dissipation (PC) @ TC=25°C | 890W |
| Short Circuit Withstand Time (tsc) | 10µs |
| Operating Junction Temperature (Tj) | -40 to +150°C |
Technical Deep Dive: The U-Series Advantage
The core of the 2MBI150US-120-50 is its Fuji Electric V-Series IGBT chip technology, specifically the "U-Series." This generation was engineered to solve a classic power electronics dilemma: the trade-off between conduction losses and switching losses. By implementing a refined trench-gate structure and an optimized field-stop layer, Fuji achieved a low VCE(sat) of 2.2V (typ). This directly translates to lower power dissipation during the on-state, a critical factor for improving efficiency in applications with high duty cycles, such as motor drives operating at low-to-medium frequencies. Simultaneously, the technology maintains controlled turn-off energy (E_off), preventing excessive voltage overshoots and simplifying snubber circuit design.
Application Scenarios and Value Proposition
The balanced performance of the Fuji 2MBI150US-120-50 makes it a versatile solution across several key industrial sectors:
- Variable Frequency Drives (VFDs): In motor control, the low conduction loss reduces heat generation in the inverter, allowing for smaller heatsinks or higher power density. Its robust Safe Operating Area (SOA) ensures reliability during motor start-up and transient load conditions.
- Uninterruptible Power Supplies (UPS): The module's high reliability and proven track record are essential for critical infrastructure. The integrated soft-recovery FWD minimizes electromagnetic interference (EMI), which is crucial for systems operating in sensitive environments like data centers.
- Welding Power Supplies: The ability to handle high pulse currents and a short-circuit withstand time of 10µs provide the necessary ruggedness for the harsh electrical environment of industrial welding equipment.
Frequently Asked Questions (FAQ)
1. What is the recommended gate drive voltage for the 2MBI150US-120-50?
For optimal performance, a gate-emitter voltage (VGE) of +15V is recommended for turn-on. To ensure a hard turn-off and prevent parasitic turn-on due to the Miller effect, a negative gate voltage of -10V to -15V is advisable, particularly in noisy or high dV/dt environments. For more insights, review our guide on robust IGBT gate drive design.
2. Can these modules be paralleled for higher current?
Yes, the 2MBI150US-120-50 can be paralleled. Key to successful paralleling is a symmetrical PCB layout to equalize stray inductances and ensuring tight matching of VCE(sat). Fuji IGBTs generally exhibit a positive temperature coefficient for VCE(sat), which aids in thermal self-balancing among paralleled modules. However, careful consideration of thermal performance and layout is critical for long-term reliability.
For application-specific design support or to explore our full range of IGBT modules, please contact our technical team.
