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Infineon FP35R12W2T4 IGBT Module

#Infineon, #FP35R12W2T4, #IGBT_Module, #IGBT, FP35R12W2T4 Insulated Gate Bipolar Transistor 54A I(C) 1200V V(BR)CES N-Channel MODULE-35

· Categories: IGBT Module
· Manufacturer: Infineon
· Price: US$ 25
· Date Code: 2024+
. Available Qty: 167
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FP35R12W2T4 Specification

Sell FP35R12W2T4, #Infineon #FP35R12W2T4 Stock, FP35R12W2T4 Insulated Gate Bipolar Transistor 54A I(C) 1200V V(BR)CES N-Channel MODULE-35, #IGBT_Module, #IGBT, #FP35R12W2T4
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/fp35r12w2t4.html

Typical0 Applications

●Auxiliary Inverters

●Air Conditioning

●Motor Drives

Electrical  Features

Low口Switching Losses

●Trench IGBT 4

●V CEsat with positive Temperature Coefficient

●Low VCEsat

Mechanical Features

●Al203 Substrate with Low Thermal Resistance

●Compact design

●Solder Contact Technology

●Rugged mounting due to integrated mounting clamps

Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :35A

Collector current Icp 1ms Tc=25°C :70A

Collector power dissipation Pc:215W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

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