#Infineon, #FP35R12W2T4, #IGBT_Module, #IGBT, FP35R12W2T4 Insulated Gate Bipolar Transistor 54A I(C) 1200V V(BR)CES N-Channel MODULE-35
Typical0 Applications
●Auxiliary Inverters
●Air Conditioning
●Motor Drives
Electrical Features
Low口Switching Losses
●Trench IGBT 4
●V CEsat with positive Temperature Coefficient
●Low VCEsat
Mechanical Features
●Al203 Substrate with Low Thermal Resistance
●Compact design
●Solder Contact Technology
●Rugged mounting due to integrated mounting clamps
Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :35A
Collector current Icp 1ms Tc=25°C :70A
Collector power dissipation Pc:215W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C