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International Rectifier IRGSL4B60KD1PBF IGBT Module

#International Rectifier, #IRGSL4B60KD1PBF, #IGBT_Module, #IGBT, IRGSL4B60KD1PBF Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-262, LEAD FREE, PLASTIC PACKAG

· Categories: IGBT Module
· Manufacturer: International Rectifier
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1183
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IRGSL4B60KD1PBF Specification

Sell IRGSL4B60KD1PBF, #International Rectifier #IRGSL4B60KD1PBF Stock, IRGSL4B60KD1PBF Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-262, LEAD FREE, PLASTIC PACKAGE-3; IRGSL4B60KD1PBF, #IGBT_Module, #IGBT, #IRGSL4B60KD1PBF
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Manufacturer Part Number: IRGSL4B60KD1PBFRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: LEAD FREE, PLASTIC PACKAGE-3ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 8.49Additional Feature: ULTRA FAST SOFT RECOVERYCase Connection: COLLECTORCollector Current-Max (IC): 11 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEFall Time-Max (tf): 89 nsGate-Emitter Thr Voltage-Max: 5.5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-262JESD-30 Code: R-PSIP-T3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 63 WQualification Status: Not QualifiedRise Time-Max (tr): 23 nsSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrierTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-262, LEAD FREE, PLASTIC PACKAGE-3

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