#Infineon, #FZ2400R17KE3_B2, #IGBT_Module, #IGBT, FZ2400R17KE3_B2 Modul mitschnellem Trench / Feldstopp IGBT 4 and Emitter Controlled 4 Diode;
FZ2400R17KE3_B2 Description Value Package 8IHV73-3 Configuration Dual Pin Count 8 Kollektor-Emitter Sperrspannung Collector Emitter Voltage 1700 V Kollektor-Dauergleichstrom DC collector current Tc=80°C,Tvj=150°C Icnom 2400A Kollektor-Dauergleichstrom DC collector current Tc=25°C,Tvj=150°C Ic 3100A Periodischer Kollektor Spitzenstrom repetitive peak collector current tp=1 ms IcRM 2400A Gesamt Verlustleistung total power dissipation Tc=25°C,Tvj=150°C Ptot 1250w Gate Emitter Spitzenspannung gate emitter peak Voltage ±20 V Mounting Screw Operating Temperature -40 to 125 °C Modul mitschnellem Trench / Feldstopp IGBT 4 and Emitter Controlled 4 Diode