1MBI1600VC-120P | Fuji Electric 1200V 1600A V-Series IGBT Module
Engineered for High-Reliability, Megawatt-Scale Power Conversion
Content last revised on October 11, 2025.
The Fuji Electric 1MBI1600VC-120P is a high-current single IGBT module engineered for exceptional thermal performance and operational robustness in demanding, high-power applications. With benchmark specifications of 1200V | 1600A | Rth(j-c) 0.020 K/W, this V-Series module provides superior thermal handling and high fault current tolerance. It directly addresses the engineering challenge of maximizing power density and ensuring long-term reliability in systems like multi-megawatt inverters. What is the primary benefit of its V-Series design? It delivers low switching losses while maintaining a robust Safe Operating Area (SOA). This module's high current capability and excellent thermal efficiency make it the optimal choice for high-power industrial drives and renewable energy systems where reliability is non-negotiable.
Key Parameter Overview
Decoding the Specs for Enhanced Thermal Management and System Reliability
The technical specifications of the 1MBI1600VC-120P are tailored for high-stress environments. The parameters below highlight its capacity for robust power handling and thermal stability, which are critical for system-level design and long-term operational life.
| Parameter | Value | Conditions |
|---|---|---|
| Collector-Emitter Voltage (Vces) | 1200 V | Tj = 25°C |
| Continuous Collector Current (Ic) | 1600 A | Tc = 80°C |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2.10 V (typ) / 2.70 V (max) | Ic = 1600 A, VGE = 15 V, Tj = 125°C |
| Thermal Resistance (Rth(j-c)) - IGBT | 0.020 K/W (max) | Junction to Case |
| Thermal Resistance (Rth(j-c)) - FWD | 0.036 K/W (max) | Junction to Case |
| Short-Circuit Withstand Time (tsc) | ≥ 10 µs | Vcc = 600V, VGE ≤ 15V, Tj = 125°C |
| Maximum Junction Temperature (Tj max) | 150 °C | - |
Download the 1MBI1600VC-120P datasheet for detailed specifications and performance curves.
Application Scenarios & Value
System-Level Benefits in Megawatt-Scale Power Conversion
The 1MBI1600VC-120P is specifically designed for power conversion systems operating at the highest power levels. Its unique combination of high current capacity and low thermal resistance provides tangible benefits in applications where performance and reliability are paramount.
Consider the design of a Wind Turbine Inverter or a large-scale solar power station. The primary engineering challenge is to efficiently convert massive amounts of DC power to grid-compliant AC power while minimizing physical footprint and ensuring decades of operational life. The 1MBI1600VC-120P's exceptionally low Rth(j-c) of 0.020 K/W is a critical enabler. This parameter signifies a highly efficient thermal pathway from the semiconductor junction to the case. For a system designer, this translates directly to a smaller, less expensive heatsink for a given power output, or alternatively, the ability to push more power through the system without exceeding thermal limits. This facilitates more compact and cost-effective Megawatt (MW) Scale Converter designs.
Furthermore, its robust 1600A rating provides the necessary current headroom to manage the demanding load profiles typical of industrial motor drives and grid-tied systems. For systems requiring a different topology, such as a half-bridge configuration, the dual-pack 2MBI1400VXB-120P-54 offers a related solution within the same voltage class.
Technical Deep Dive
Analyzing the V-Series Chip Technology for Robust High-Current Operation
The performance of the 1MBI1600VC-120P is rooted in Fuji Electric's advanced V-Series chip technology. This generation of IGBTs is optimized to balance the critical trade-off between on-state voltage (VCE(sat)) and switching losses, a key factor in overall inverter efficiency. The datasheet specifies a typical VCE(sat) of 2.10V at its nominal 1600A current and 125°C, indicating low conduction losses even under heavy loads.
A key, often overlooked, feature is the module's low internal stray inductance. Think of stray inductance as unwanted "kinks" in a high-flow water pipe. During rapid turn-off, this inductance causes a pressure spike (voltage overshoot). The 1MBI1600VC-120P's optimized internal layout minimizes these "kinks," resulting in lower voltage overshoot during fast switching events. This enhances the device's reliability by reducing voltage stress and simplifies the design of external Snubber Circuit networks, saving both board space and component cost. This internal design discipline, combined with a high short-circuit withstand time, forms the foundation of the module's reputation for robustness in applications like high-power motor drives where fault conditions can occur.
Frequently Asked Questions
How does the Rth(j-c) of 0.020 K/W impact system design?
This very low thermal resistance value indicates superior heat transfer efficiency from the IGBT chip to the module's baseplate. It allows engineers to design more compact cooling systems, potentially reducing the size, weight, and cost of heatsinks and fans. This directly contributes to higher overall system power density.
What is the significance of the 10µs short-circuit withstand time?
This specification is a critical reliability metric. It guarantees that the IGBT can survive a direct short-circuit event for at least 10 microseconds. This provides a crucial time window for the system's protection circuitry to detect the fault and safely shut down the gate drive, preventing a catastrophic failure of the module and protecting the wider system from damage.
Is the 1MBI1600VC-120P suitable for parallel operation to achieve higher current ratings?
Yes, high-power modules like this are often designed with paralleling in mind. The positive temperature coefficient of VCE(sat) characteristic of Fuji Electric V-Series IGBT technology helps promote balanced current sharing among parallel modules. However, successful paralleling requires careful attention to symmetrical busbar layout to minimize inductance imbalances and ensure proper gate drive signal integrity for all modules.
What does the "VC" suffix in the part number signify?
The "VC" designation in Fuji Electric's part numbering typically refers to the V-Series generation of IGBT chip technology incorporated within the module. This series is characterized by an optimized balance of low conduction and switching losses, contributing to higher efficiency in power conversion applications.
Strategic Component Selection
Integrating the 1MBI1600VC-120P into a power system is a strategic decision for projects where long-term reliability and thermal margin are critical design objectives. Its high-current capability and robust construction provide the foundation for building resilient, high-density power conversion platforms. This module is not merely a component but an enabler for next-generation systems in renewable energy and high-power industrial automation, where performance under stress dictates system viability and return on investment.
