Infineon FP100R06KE3

FP100R06KE3 Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MODULE-24; FP100R06KE3

· Categories: IGBT
· Manufacturer: Infineon
· Price: US$
· Date Code: 2025+
. Available Qty: 89
Like
Tweet
Pin It
4k
Whatsapp: 0086 189 2465 1869
Tags:

Content last revised on November 12, 2025

FP100R06KE3 IGBT Module: Engineering an Efficient 600V/100A Power Stage

Introduction to the FP100R06KE3: A Deep Dive

Optimizing Performance in Medium-Frequency Power Conversion

The FP100R06KE3 is a highly integrated power module engineered to provide a robust and efficient solution for three-phase inverter applications. It leverages Infineon's proven TRENCHSTOP™ IGBT3 technology to achieve a superior balance between conduction and switching losses. This module integrates a full four-pack (H-Bridge) configuration rated for 600V and 100A, along with an NTC thermistor for precise temperature monitoring. Key benefits include excellent thermal performance and simplified driver circuit design. This design directly addresses the engineering challenge of maximizing efficiency in cost-sensitive applications without compromising reliability. For systems requiring higher power density in the 100A class, the module's low saturation voltage is a definitive advantage.

Application Scenarios & Value

System-Level Benefits in Industrial Motion Control and Power Conversion

The FP100R06KE3 is engineered for performance in demanding industrial environments. Its primary value is demonstrated in applications where efficiency, thermal stability, and power density are critical design constraints. For motor drive systems, specifically in a compact Variable Frequency Drive (VFD), the low VCE(sat) of the TRENCHSTOP™ IGBT3 technology directly translates to reduced conduction losses. This is a critical factor during low-speed, high-torque motor operation, as it minimizes waste heat generation. The tangible engineering benefit is the ability to specify a smaller, more cost-effective heatsink, which reduces both the bill of materials (BOM) and the overall physical footprint of the inverter. This efficiency is also paramount in Uninterruptible Power Supply (UPS) systems, where minimizing standby power loss is crucial for achieving high energy-efficiency ratings.

The integrated NTC thermistor provides a direct feedback path for the system's controller, enabling precise thermal management and overload protection. This feature is instrumental in enhancing the long-term reliability of the entire power stage. While the FP100R06KE3 is optimized for 600V applications, for systems operating on higher voltage industrial lines, a component like the FP75R12KE3 provides a 1200V blocking voltage capability.

Key Parameter Overview

A Functional Breakdown of Electrical and Thermal Specifications

The specifications of the FP100R06KE3 are tailored for high-performance power switching. The table below groups key parameters by function to facilitate engineering evaluation.

Parameter Value Conditions
Inverter IGBT Characteristics
Collector-Emitter Voltage (V_CES) 600 V T_vj = 25 °C
Continuous Collector Current (I_C nom) 100 A T_C = 80 °C
Collector-Emitter Saturation Voltage (V_CE sat) 1.50 V (Typ.) I_C = 100 A, V_GE = 15 V, T_vj = 25 °C
Gate-Emitter Threshold Voltage (V_GE(th)) 5.0 V - 6.5 V I_C = 4.0 mA, V_CE = V_GE, T_vj = 25 °C
Freewheeling Diode Characteristics
Forward Voltage (V_F) 1.55 V (Typ.) I_F = 100 A, V_GE = 0 V, T_vj = 25 °C
Reverse Recovery Energy (E_rec) 11.0 mJ (Typ.) I_F = 100 A, V_R = 300 V, T_vj = 125 °C
Module & Thermal Characteristics
Housing EconoPIM™ 2
NTC-Thermistor (R_25) 5.00 kΩ ± 5% T_C = 25 °C
Maximum Junction Temperature (T_vj max) 175 °C
Operating Junction Temperature (T_vj op) -40 to 150 °C

Download the FP100R06KE3 datasheet for detailed specifications and performance curves.

Technical Deep Dive

Inside TRENCHSTOP™ IGBT3: The Conduction Loss Advantage

The core performance of the FP100R06KE3 is derived from its Infineon TRENCHSTOP™ IGBT3 technology. Unlike earlier planar IGBT designs, this technology employs a trench gate structure which increases the density of charge carriers in the conducting channel. This is analogous to widening a highway to allow more traffic to flow with less congestion. The result is a significantly lower on-state voltage drop, or VCE(sat), for a given current. For a power electronics designer, this reduction in VCE(sat) directly curtails conduction losses (P_cond = VCE(sat) * I_C), which are a dominant source of heat in medium-frequency applications like motor drives and SMPS. By minimizing this "congestion" for the current, the IGBT operates more efficiently, easing thermal design and improving overall system reliability.

Frequently Asked Questions (FAQ)

What is the primary benefit of the TRENCHSTOP™ IGBT3 technology used in the FP100R06KE3?
Its main advantage is a very low collector-emitter saturation voltage (VCE(sat)), which significantly reduces conduction losses. This leads to higher efficiency and lower operating temperatures, particularly in applications with high load currents.

How does the integrated NTC thermistor improve system design?
The built-in NTC thermistor provides a real-time, isolated temperature reading of the module's baseplate. This allows the control system to implement precise thermal monitoring and protection, preventing overheating and enhancing the long-term reliability of the power converter without the need for external sensors.

What does the "Four-Pack" or "H-Bridge" configuration enable?
The four-pack topology integrates four IGBTs and four freewheeling diodes, forming a full H-Bridge. This configuration is ideal for single-phase inverter applications, DC-DC converters, and can be utilized in various motion control circuits, simplifying the power stage layout and reducing component count compared to using discrete devices.

System Integration and Design Support

Streamlining Your Development Cycle

The FP100R06KE3 is housed in the industry-standard EconoPIM™ 2 package, which simplifies both mechanical and electrical integration. Its standardized footprint and terminal layout facilitate easy PCB design and heatsink mounting. For further design inquiries or to discuss how this module can fit into your specific power architecture, our technical team is available to provide support.

More from Infineon

Infineon
Infineon
Infineon
Infineon
Infineon
Infineon