Toshiba MG100J2YS1 IGBT Module

#MG100J2YS1 Description
MG100J2YS1 IGBT Intelligent Module; TRANSISTOR MODULE; 25A/1200V/2unit
MG100J2YS1  0.45 lbs
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic:100A
Collector current Icp:200A
Collector power dissipation Pc:450W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.3 *1 N·m
2IGBT: 100A600V