#IXYS, #IXGA42N30C3, #IGBT_Module, #IGBT, IXGA42N30C3 Insulated Gate Bipolar Transistor, 250A I(C), 300V V(BR)CES, N-Channel, TO-263AB, TO-263, 2 PIN; IXGA42N30C3
Manufacturer Part Number: IXGA42N30C3Pbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: IXYS CORPPart Package Code: D2PAKPackage Description: SMALL OUTLINE, R-PSSO-G2Pin Count: 4ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 5.7Case Connection: COLLECTORCollector Current-Max (IC): 250 ACollector-Emitter Voltage-Max: 300 VConfiguration: SINGLEFall Time-Max (tf): 120 nsGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-263ABJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 2Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 223 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 250A I(C), 300V V(BR)CES, N-Channel, TO-263AB, TO-263, 2 PIN