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Mitsubishi CM600HU-24F IGBT Module

Mitsubishi CM600HU-24F: A 1200V/600A IGBT with low Vce(sat) for maximum efficiency and robust performance in high-power industrial applications.

· Categories: IGBT Module
· Manufacturer: Mitsubishi
· Price: US$ 65
· Date Code: 2021+
. Available Qty: 224
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CM600HU-24F Specification

Mitsubishi CM600HU-24F | High-Power 1200V/600A Single IGBT for Demanding Applications

The Mitsubishi CM600HU-24F is an industrial-grade single IGBT module engineered for high-power conversion systems that demand exceptional reliability and thermal performance. As a cornerstone of Mitsubishi's F-Series, this device leverages proven Trench Gate technology to deliver a superior balance of low conduction losses and robust switching capability. It is designed for engineers building high-current inverters, converters, and chopper circuits where granular control and raw power are paramount.

  • High Current Capability: Rated for a continuous collector current (DC) of 600A, making it ideal for high-power motor drives and industrial power supplies.
  • High Voltage Blocking: A 1200V collector-emitter voltage (V_CES) rating provides a substantial safety margin for systems operating on 480V to 690V AC lines.
  • Low Conduction Loss: Features a low saturation voltage (V_CE(sat)) which directly translates to lower power dissipation and improved system efficiency.
  • Isolated Package: The industry-standard package includes an insulated metal baseplate, simplifying thermal management and ensuring high electrical isolation (2500V, 1 min) between the device and the heatsink.

Key Parameter Overview

This table provides a snapshot of the critical electrical and thermal characteristics for the CM600HU-24F. For a comprehensive analysis, including performance curves and safe operating area (SOA) charts, refer to the official datasheet.

ParameterValue
Collector-Emitter Voltage (V_CES)1200V
Collector Current (I_C) @ T_C=80°C600A
Collector-Emitter Saturation Voltage (V_CE(sat)) (Typ. @ I_C=600A)2.20V
Gate-Emitter Threshold Voltage (V_GE(th))5.5V to 7.5V
Maximum Power Dissipation (P_C) @ T_C=25°C3570W
Thermal Resistance (R_th(j-c)) per IGBT0.035 °C/W

For complete specifications and application notes, you can download the CM600HU-24F datasheet here.

Technical Deep Dive: The Engineering Behind the F-Series

The performance of the CM600HU-24F is rooted in Mitsubishi's advanced CSTBT™ (Carrier Stored Trench-gate Bipolar Transistor) technology. Unlike older planar IGBT structures, the trench gate design creates a vertical current path that significantly increases cell density. This architecture allows for a drastic reduction in the collector-emitter saturation voltage (V_CE(sat)), which is a primary source of conduction losses in high-current applications.

For a system designer, this means less energy is wasted as heat, leading to higher overall efficiency and reduced cooling requirements. The single-switch ("one-in-one") configuration of this module offers maximum design flexibility, allowing engineers to construct custom topologies such as three-phase inverters, H-bridges, or multi-level converters without the constraints of a pre-configured half-bridge module.

Application Scenarios & Value Proposition

The robust characteristics of the CM600HU-24F make it a workhorse component in several demanding fields:

  • Industrial Motor Drives: In high-horsepower Variable Frequency Drives (VFDs) and servo systems, the 600A rating provides ample current to control large industrial motors. Its low V_CE(sat) minimizes heat buildup in the drive cabinet, a critical factor for long-term reliability.
  • Welding Power Supplies: The module's ability to handle high pulse currents and its robust thermal cycling capability are essential for modern inverter-based welding machines, enabling precise control over the welding arc for superior results.
  • Renewable Energy Systems: In large-scale solar and wind power inverters, these IGBT modules form the core of the power conversion stage. Their high efficiency is vital for maximizing the energy harvested and fed into the grid. Understanding thermal performance through metrics like Rth is key to designing these reliable systems.

Frequently Asked Questions (FAQ)

What is the primary advantage of the 'single switch' configuration of the CM600HU-24F?

The single IGBT configuration provides unparalleled design freedom. Unlike dual or six-pack modules, it allows engineers to optimize the physical layout of their power stage, particularly the busbar and gate drive circuitry. This is crucial for minimizing stray inductance in high-frequency or fast-switching applications and for implementing custom thermal management strategies where individual device cooling is required.

Given the 3570W power dissipation rating, what is the most critical design consideration?

Effective thermal management is non-negotiable. Achieving the full performance of the CM600HU-24F requires a meticulously designed cooling system. This includes selecting a high-performance heatsink, applying a quality Thermal Interface Material (TIM) to ensure minimal thermal resistance, and often incorporating forced-air or liquid cooling to maintain the junction temperature well within its specified Safe Operating Area (SOA). Careful analysis of thermal resistance from junction-to-case and case-to-heatsink is essential for a reliable design. For further questions about system integration, please contact our technical team.

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