#TOSHIBA, #MG150H1FL1, #IGBT_Module, #IGBT, MG150H1FL1 TRANSISTOR 150 A, 550 V, NPN, Si, POWER TRANSISTOR, 2-68C1A, 4 PIN, BIP General Purpose Power; MG150H1FL1
Manufacturer Part Number: MG150H1FL1Part Life Cycle Code: ObsoleteIhs Manufacturer: Toshiba CORPPackage Description: FLANGE MOUNT, R-PUFM-X4Pin Count: 4Manufacturer: Toshiba America Electronic ComponentsRisk Rank: 5.81Case Connection: ISOLATEDCollector Current-Max (IC): 150 ACollector-Emitter Voltage-Max: 550 VConfiguration: DARLINGTON WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 80JESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON TRANSISTOR 150 A, 550 V, NPN, Si, POWER TRANSISTOR, 2-68C1A, 4 PIN, BIP General Purpose Power