BSM200GD60DLC
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: No
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 2.45 V
Continuous Collector Current at 25 C: 226 A
Gate-Emitter Leakage Current: 400 nA
Pd - Power Dissipation: 700 W
Package / Case: EconoPACK 3A
Maximum Operating Temperature: + 125 C
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 10
200A/600V/IGBT/6U;IGBT Modules 600V 200A 3-PHASE