Toshiba MG150Q2YS51 IGBT Module

MG150Q2YS51 Description High Power Switching Applications Motor Control Applications . High input impedance . High speed : tf = 0.3µs (Max) @Inductive Load .Low saturation voltage : VCE (sat) = 3.6V (Max) .Enhancement-mode .Includes a complete half bridge in one package. .The electrodes are isolated from case. Collector-emitter voltage VCES 1200 V Gate-emitter voltage VGES ±20 V Collector current DC IC (25°C / 80°C) 200 / 150A Collector current 1ms ICP (25°C / 80°C) 400 / 300A Forward current DC IF 150A Forward current 1ms IFM 300A Junction temperature Tj 150 °C Storage temperature range Tstg −40 ~ 125 °C Isolation voltage VIsol 2500 (AC 1 min.) V Screw torque (Terminal / mounting) 3 / 3 N·m MG150Q2YS51 Toshiba GTR Module Silicon N Channel IGBT (1 PER)