Sell Toshiba MG150Q2YS51 New Stock

MG150Q2YS51 MG150Q2YS51 Toshiba GTR Module Silicon N Channel IGBT (1 PER); MG150Q2YS51
  • Part Number:    

    MG150Q2YS51

  • Category:    

    IGBT Module

  • Manufacturer:    

    Toshiba

  • Packaging:    

    IGBT module

  • Data Code:    

    2019+

  • Qty Available:    

    434

Whatsapp / Wechat ID: +8618924651869
Email us: sales@shunlongwei.com
inquiry now
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Email: sales@shunlongwei.com

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MG150Q2YS51 Description

High Power Switching Applications
Motor Control Applications
. High input impedance
. High speed : tf = 0.3µs (Max) @Inductive Load
.Low saturation voltage : VCE (sat) = 3.6V (Max)
.Enhancement-mode
.Includes a complete half bridge in one package.
.The electrodes are isolated from case.
Collector-emitter voltage VCES 1200 V
Gate-emitter voltage VGES ±20 V
Collector current DC IC (25°C / 80°C) 200 / 150A
Collector current 1ms ICP (25°C / 80°C) 400 / 300A
Forward current DC IF 150A
Forward current 1ms IFM 300A
Junction temperature Tj 150 °C
Storage temperature range Tstg −40 ~ 125 °C
Isolation voltage VIsol 2500 (AC 1 min.) V
Screw torque (Terminal / mounting) 3 / 3 N·m
MG150Q2YS51 Toshiba GTR Module Silicon N Channel IGBT (1 PER)

Shunlongwei Inspected Every MG150Q2YS51 Before Ship, All MG150Q2YS51 with 6 months warranty.

Shunlongwei Co. Ltd.

Contact: Alice Peng

Tel:+86-755-82732562

E-mail: sales@shunlongwei.com

ADD:Rom512,Bldg#505, Shangbu Industrial Area, Huaqiang North Rd., SZ,518000,China.