Sell MIEB101H1200EH IXYS IGBT Module

#IXYS, #MIEB101H1200EH, #IGBT_Module, #IGBT, MIEB101H1200EH Insulated Gate Bipolar Transistor, 183A I(C), 1200V V(BR)CES,; MIEB101H1200EH

· Categories: IGBT Module

· Manufacturer: IXYS

· Price: US$

· Date Code: Lead free / RoHS Compliant

. Available Qty: 2155

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MIEB101H1200EH Specification

Sell MIEB101H1200EH, #IXYS #MIEB101H1200EH Stock, MIEB101H1200EH Insulated Gate Bipolar Transistor, 183A I(C), 1200V V(BR)CES,; MIEB101H1200EH, #IGBT_Module, #IGBT, #MIEB101H1200EH

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Manufacturer Part Number: MIEB101H1200EHRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPManufacturer: IXYS CorporationRisk Rank: 5.71Collector Current-Max (IC): 183 ACollector-Emitter Voltage-Max: 1200 VGate-Emitter Voltage-Max: 20 VNumber of Elements: 1Operating Temperature-Max: 125 °CPower Dissipation-Max (Abs): 630 WSubcategory: Insulated Gate BIP TransistorsVCEsat-Max: 2.2 V Insulated Gate Bipolar Transistor, 183A I(C), 1200V V(BR)CES,

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IXYS MIEB101H1200EH IGBT Module

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MIEB101H1200EH Specification

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