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IXYS MUBW6-06A6 IGBT Module

#IXYS, #MUBW6_06A6, #IGBT_Module, #IGBT, MUBW6-06A6 Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, MODULE-25; MUBW6-06A6

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 701
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MUBW6-06A6 Specification

Sell MUBW6-06A6, #IXYS #MUBW6-06A6 Stock, MUBW6-06A6 Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, MODULE-25; MUBW6-06A6, #IGBT_Module, #IGBT, #MUBW6_06A6
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/mubw6-06a6.html

Manufacturer Part Number: MUBW6-06A6Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X25Pin Count: 25Manufacturer: IXYS CorporationRisk Rank: 5.72Additional Feature: FASTCase Connection: ISOLATEDCollector Current-Max (IC): 7 ACollector-Emitter Voltage-Max: 600 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X25JESD-609 Code: e3Number of Elements: 7Number of Terminals: 25Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 38 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Matte Tin (Sn)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, MODULE-25

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