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MITSUBISHI QM200HA-HK IGBT Module

QM200HA-HK Mitsubishi transistor module high power switching use insulated type 200A/600V/GTR/1U

· Categories: IGBT Module
· Manufacturer: MITSUBISHI
· Price: US$ 20
· Date Code: 2024+
. Available Qty: 319
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QM200HA-HK Specification

QM200HA-HK Features
• IC Collector current 200A

• VCEX Collector-emitter voltage 600V

• hFE DC current gain 75

• Insulated Type

• UL Recognized
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :200A
Collector current Icp 1ms Tc=25°C :400A
Collector power dissipation Pc:1250W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 1.47~1.96 N·m
Weight 420g

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