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Datasheets:MUN(2,5)133, MMUN2133L, DTA143Zxx, NSBA143ZF3Product Photos:SC-70-3_419AB-01PCN Design/Specification:Copper Wire 29/Oct/2009Standard Package:3,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:PNP - Pre-BiasedCurrent - Collector (Ic) (Max):100mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):4.7kResistor - Emitter Base (R2) (Ohms):47kDC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10VVce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mACurrent - Collector Cutoff (Max):500nAFrequency - Transition:-Power - Max:202mWMounting Type:Surface MountPackage / Case:SC-70, SOT-323Supplier Device Package:SC-70-3 (SOT323)
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Datasheets:MUN(2,5)133, MMUN2133L, DTA143Zxx, NSBA143ZF3Product Photos:SC-70-3_419AB-01PCN Design/Specification:Copper Wire 29/Oct/2009Standard Package:3,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:PNP - Pre-BiasedCurrent - Collector (Ic) (Max):100mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):4.7kResistor - Emitter Base (R2) (Ohms):47kDC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10VVce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mACurrent - Collector Cutoff (Max):500nAFrequency - Transition:-Power - Max:202mWMounting Type:Surface MountPackage / Case:SC-70, SOT-323Supplier Device Package:SC-70-3 (SOT323)
Shunlongwei Inspected every MUN5133T1G before Ship, All MUN5133T1G with 6 months warranty.
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