Content last revised on November 25, 2024
MG100Q2YS11 Description
GTR Module
Silicon N Channel IGBT
High Power Switching Applications
Motor Control Applications
Features
High input impedance
●High speed:
Low saturation:tr= 1.0μs (Max.) tπ= 0.5μs (Max.) VCE (sat)= 2.7V (Max.)
Enhancement mode
The electrodes are isolated from case
Includes a complete half bridge card in one package
aximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :100A
Collector current Icp 1ms Tc=25°C :200A
Collector power dissipation Pc:800W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3/3 N·m
