#ON Semiconductor, #NJVNJD2873T4G, #IGBT_Module, #IGBT, NJVNJD2873T4G 2.0 A, 50 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL; NJVNJD2873T4G
Manufacturer Part Number: NJVNJD2873T4GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PSSO-G2Pin Count: 3Manufacturer Package Code: 369CECCN Code: EAR99HTS Code: 8541.29.00.75Manufacturer: ON SemiconductorRisk Rank: 1.45Case Connection: COLLECTORCollector Current-Max (IC): 2 ACollector-Emitter Voltage-Max: 50 VConfiguration: SINGLEDC Current Gain-Min (hFE): 40JESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: NPNPower Dissipation-Max (Abs): 15 WReference Standard: AEC-Q101Subcategory: Other TransistorsSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime 2.0 A, 50 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL