Mitsubishi QM75DY-HB IGBT Module

QM75DY-H Description

QM75DY-H is a Mitsubishi power transistor module that has high power switching characteristic that guarantees high efficiency. It comes with an insulation, ensuring a robust module construction.With a weight of only 0.46 lbs., QM75DY-H is also space-saving and practical to use. You don’t even have to worry about risks for injury! UL Recognized, it is 100% safe for usage. It’s extraordinary current versions are designed for automotive testing as well.

QM75DY-H  0.46 lbs

Target_Applications

QM75DY-H could be used in Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders

Features

HIGH POWER SWITCHING USE INSULATED TYPE, HIGH POWER SWITCHING USE INSULATED TYPE OUTLINE DRAWING & CIRCUIT DIAGRAM

• IC Collector current .......................... 75A

• VCEX Collector-emitter voltage ........... 600V

• hFE DC current gain............................. 750A

• Insulated Type

• UL Recognized

Maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :75A

Surge Collector reverse current (forward diode current) Icsm 750A

Collector power dissipation Pc:350W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque M6 1.96~2.94 N·m

weight 210g