Fuji 2MBI900VXA-120P-50 | High-Power Density IGBT for Demanding Inverters
The Fuji 2MBI900VXA-120P-50 is a high-current, half-bridge IGBT module engineered for power conversion systems where efficiency, power density, and long-term reliability are non-negotiable. Leveraging Fuji Electric's cutting-edge 7th generation "X-Series" technology, this 1200V / 900A module provides a robust foundation for next-generation inverters and drives. It is specifically designed to minimize losses and maximize thermal performance, enabling system designers to push operational boundaries.
Key Features at a Glance
- High Current Rating: 900A continuous current capability at a 1200V blocking voltage.
- 7th Generation Chip Technology: Incorporates advanced Trench Field-Stop IGBTs and Free Wheeling Diodes (FWD) for significantly reduced losses.
- Ultra-Low Conduction Loss: Features a typical VCE(sat) of 1.70V, directly translating to higher inverter efficiency and lower thermal load.
- High-Temperature Operation: Rated for a maximum junction temperature (Tjmax) of 175°C, providing substantial thermal headroom for compact designs or operation in harsh environments.
- Enhanced Reliability: Utilizes an Al-SiC baseplate for superior thermal cycling capability, ensuring longevity in applications with fluctuating loads.
Technical Deep Dive: The Engineering Advantage
The performance of the 2MBI900VXA-120P-50 is rooted in two key technological advancements. Firstly, the 7th generation chipset represents a significant leap in silicon design. By optimizing the trench gate and field-stop structures, Fuji has achieved an exceptional balance between low on-state voltage (Vce(sat)) and reduced switching energy (Eoff). For a design engineer, this means lower total power loss, which simplifies thermal management and can lead to smaller, more cost-effective heatsinks.
Secondly, the module's construction addresses long-term mechanical stress. The Aluminum Silicon Carbide (Al-SiC) baseplate has a coefficient of thermal expansion (CTE) that closely matches the ceramic substrate it's bonded to. This minimizes stress during temperature swings, a common cause of bond-wire lift-off and solder fatigue. The result is a dramatic improvement in power cycling capability, a critical parameter for robotic servo drives and renewable energy systems. This focus on both electrical and mechanical robustness is what makes these IGBT modules a premier choice for high-reliability systems.
Application Scenarios & Value Proposition
The specific characteristics of the Fuji 2MBI900VXA-120P-50 deliver tangible value across several high-power applications:
- High-Power Industrial Motor Drives: In large-scale drives for manufacturing, pumps, and fans, the module's high efficiency directly reduces operating electricity costs. Its thermal robustness ensures dependable operation in demanding factory environments, minimizing costly downtime.
- Renewable Energy Inverters (Solar & Wind): The combination of high power density and a 175°C Tjmax allows for more compact and powerful central Solar Inverter designs. The superior power cycling withstands the intermittent power generation typical of wind and solar sources, extending the inverter's service life.
- Uninterruptible Power Supplies (UPS): For data centers and critical infrastructure, the module’s reliability and ability to handle high currents are paramount. Its low conduction losses improve the overall efficiency of the UPS, reducing cooling requirements and operational expenditure.
Key Parameter Overview
The following table provides a summary of the critical specifications for the 2MBI900VXA-120P-50. For comprehensive details, design curves, and safety information, please refer to the official Fuji 2MBI900VXA-120P-50 datasheet.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (Vces) | 1200V |
| Continuous Collector Current (Ic @ Tc=80°C) | 900A |
| Collector-Emitter Saturation Voltage (Vce(sat), typ. @ Ic=900A, Tj=125°C) | 1.70V |
| Maximum Operating Junction Temperature (Tjmax) | 175°C |
| Thermal Resistance, Junction to Case (Rth(j-c), per IGBT) | 0.038 °C/W |
| Package | M249 |
Engineering & Integration Insights (FAQ)
How does the 175°C Tjmax directly benefit my design?
A higher maximum junction temperature provides more design flexibility. It allows you to either increase the output power of your inverter within an existing footprint, or to design a system with a smaller, lighter, and more economical heatsink for the same output power. This is a crucial factor in improving overall system power density and can significantly impact cost and form factor.
What is the main consideration when paralleling these modules?
The Fuji 2MBI900VXA-120P-50 features a positive temperature coefficient for Vce(sat), which promotes natural current balancing between parallel modules. However, achieving successful high-current paralleling still demands meticulous attention to layout symmetry in the busbars and a robust, well-designed gate drive circuit to ensure simultaneous switching and prevent oscillations.
If you're designing a high-power conversion system and need a component that delivers on efficiency, density, and reliability, the 2MBI900VXA-120P-50 is an exceptional candidate. For detailed application support or to discuss your project's specific needs, please contact our technical team to explore how this module can elevate your design and learn more about avoiding common causes of IGBT failure.
