#ON Semiconductor, #NSVBC114YDXV6T1G, #IGBT_Module, #IGBT, NSVBC114YDXV6T1G Dual NPN Bipolar Digital Transistor (BRT), SOT-563, 6 LEAD, 4000-REEL; NSVBC114YDXV6T1G
Manufacturer Part Number: NSVBC114YDXV6T1GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-F6Pin Count: 6Manufacturer Package Code: 463A-01ECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 5.68Additional Feature: BUILT IN BIAS RESISTANCE RATIO IS 4.7Collector Current-Max (IC): 0.1 ACollector-Emitter Voltage-Max: 50 VConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTORDC Current Gain-Min (hFE): 80JESD-30 Code: R-PDSO-F6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 0.5 WReference Standard: AEC-Q101Subcategory: BIP General Purpose Small SignalSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: FLATTerminal Position: DUALTime Dual NPN Bipolar Digital Transistor (BRT), SOT-563, 6 LEAD, 4000-REEL