Content last revised on November 5, 2025
Fuji Electric 2MBI75N-120 | A Robust 1200V/75A Dual IGBT for Industrial Inverters
The Fuji Electric 2MBI75N-120 is a cornerstone component for power electronics engineers designing high-reliability systems. This dual IGBT module, configured in a half-bridge topology, is engineered for durability and consistent performance in demanding industrial applications. It represents a classic choice for designs where proven technology and operational robustness are paramount.
Product Highlights at a Glance
- Voltage and Current Rating: 1200V collector-emitter voltage (Vces) and 75A continuous collector current (Ic), providing a substantial power handling capability for mid-range applications.
- Low Conduction Loss: Features a low collector-emitter saturation voltage (Vce(sat)), which directly translates to reduced power dissipation and improved thermal efficiency.
- High Reliability: Built with Fuji Electric's established N-Series technology, this module has a long track record of field performance, ensuring system longevity.
- Integrated FWD: Includes a soft and fast recovery free-wheeling diode (FWD) co-packaged with the IGBT, simplifying inverter leg design and improving switching characteristics.
- Standardized Package: Housed in the industry-standard M223 package, facilitating straightforward mechanical integration and heatsink mounting.
Key Technical Parameters
The following table outlines the critical electrical and thermal characteristics that define the performance of the 2MBI75N-120. For a comprehensive list of specifications and performance curves, you can download the official Fuji Electric 2MBI75N-120 datasheet.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (Vces) | 1200V |
| Continuous Collector Current (Ic) @ Tc=80°C | 75A |
| Collector-Emitter Saturation Voltage (Vce(sat)) @ Ic=75A, Tj=125°C | 2.7V (Max) |
| Gate-Emitter Voltage (Vges) | ±20V |
| Total Power Dissipation (Pc) | 480W |
| Thermal Resistance, Junction to Case (Rth(j-c)) | 0.26 °C/W (per IGBT) |
| Operating Junction Temperature (Tj) | -40 to +150°C |
Application Scenarios & Engineering Value
The Fuji Electric 2MBI75N-120 is not designed for cutting-edge, high-frequency applications like EV fast chargers. Instead, its value lies in its exceptional reliability and cost-effectiveness for mainstream industrial systems. It is one of the foundational IGBT modules for a reason.
- Variable Frequency Drives (VFDs): In motor control for pumps, fans, and conveyors, switching frequencies are typically below 10kHz. The 2MBI75N-120's low VCE(sat) minimizes conduction losses, which are dominant in these applications, leading to a cooler-running and more efficient drive. Its robustness ensures it can handle the inductive load kickbacks common in high-efficiency inverter ACs.
- Uninterruptible Power Supplies (UPS): For commercial and industrial UPS systems, reliability is non-negotiable. The proven N-Series technology provides the long-term stability required to ensure continuous power, while the 1200V rating offers a sufficient safety margin for line voltage fluctuations.
- Welding Power Supplies: The module's ability to handle high pulse currents and its robust thermal design make it a suitable choice for the power output stage of inverter-based welding machines.
Engineer's FAQ for the 2MBI75N-120
Here are expert answers to common questions engineers have when designing with this module.
- What are the recommended gate drive settings for this module?For optimal performance, a gate voltage (Vge) of +15V for turn-on and -8V to -15V for turn-off is recommended. A negative gate voltage ensures a firm turn-off, preventing parasitic turn-on induced by high dv/dt, which is critical for system reliability. A gate resistor (Rg) in the range of 10 to 33 ohms is typical, but should be tuned based on your specific switching speed and EMI requirements.
- How critical is thermal management for this module?Very critical. While its thermal resistance is low, achieving the rated 75A requires an effective thermal solution. Ensure a high-quality thermal interface material (TIM) is used between the module baseplate and the heatsink. The heatsink itself must be sized to maintain a case temperature (Tc) well below the maximum limit to avoid junction temperature overshoot, a common cause of IGBT failure.
- Can I parallel these modules for higher current?While possible, paralleling IGBT modules requires careful design considerations. The positive temperature coefficient of Vce(sat) in Fuji Electric N-Series IGBTs provides some inherent self-balancing for static current sharing. However, dynamic sharing during switching is heavily dependent on symmetrical PCB layout and matched gate drive circuits. If your application requires more than 75A, it is often more reliable and cost-effective to select a single, higher-rated module. For questions about your specific application, please contact our technical team for a consultation.
