#ON Semiconductor, #NTTFS5116PLTAG, #IGBT_Module, #IGBT, NTTFS5116PLTAG Single P-Channel Power MOSFET -60V, -20A, 52mΩ, WDFN8 3.3x3.3, 0.65P, 1500-REEL; NTTFS5116PLTAG
Manufacturer Part Number: NTTFS5116PLTAGBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPart Package Code: DFNPackage Description: SMALL OUTLINE, S-PDSO-F5Pin Count: 8Manufacturer Package Code: 511ABECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 1.45Avalanche Energy Rating (Eas): 45 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 60 VDrain Current-Max (Abs) (ID): 20 ADrain Current-Max (ID): 5.7 ADrain-source On Resistance-Max: 0.072 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: S-PDSO-F5JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 5Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: SQUAREPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: P-CHANNELPower Dissipation-Max (Abs): 40 WPulsed Drain Current-Max (IDM): 76 AQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: FLATTerminal Position: DUALTime Single P-Channel Power MOSFET -60V, -20A, 52mΩ, WDFN8 3.3x3.3, 0.65P, 1500-REEL