#NIEC, #PBMB200A6, #IGBT_Module, #IGBT, PBMB200A6 Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel; PBMB200A6
Manufacturer Part Number: PBMB200A6Part Life Cycle Code: ObsoleteIhs Manufacturer: NIHON INTER ELECTRONICS CORPPackage Description: FLANGE MOUNT, R-XUFM-X14Manufacturer: Nihon Inter Electronics CorporationRisk Rank: 5.84Case Connection: ISOLATEDCollector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X14Number of Elements: 4Number of Terminals: 14Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 780 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Nom (toff): 450 nsTurn-on Time-Nom (ton): 250 nsVCEsat-Max: 2.6 V Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel