#Fuji, #2DI200A_020, #IGBT_Module, #IGBT, 2DI200A-020 Power Bipolar Transistor, 200A I(C), 300V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin; 2DI200A-0
Manufacturer Part Number: 2DI200A-020Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPackage Description: FLANGE MOUNT, R-PUFM-X6ECCN Code: EAR99Manufacturer: Fuji Electric Co LtdRisk Rank: 5.84Case Connection: ISOLATEDCollector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 300 VConfiguration: 2 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 100Fall Time-Max (tf): 3000 nsJESD-30 Code: R-PUFM-X6Number of Elements: 2Number of Terminals: 6Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNPower Dissipation Ambient-Max: 500 WPower Dissipation-Max (Abs): 500 WQualification Status: Not QualifiedRise Time-Max (tr): 2000 nsSubcategory: BIP General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Max (toff): 15000 nsTurn-on Time-Max (ton): 2000 ns Power Bipolar Transistor, 200A I(C), 300V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin