#Fuji, #2MBI150UC_120, #IGBT_Module, #IGBT, 2MBI150UC-120 Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, M234, 4 PIN; 2MBI150UC-120
Manufacturer Part Number: 2MBI150UC-120Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPackage Description: FLANGE MOUNT, R-XUFM-X4Pin Count: 4Manufacturer: Fuji Electric Co LtdRisk Rank: 5.84Case Connection: ISOLATEDCollector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X4Number of Elements: 2Number of Terminals: 4Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 370 nsTurn-on Time-Nom (ton): 360 ns Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, M234, 4 PIN