#Vishay, #2N4339, #IGBT_Module, #IGBT, 2N4339 Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA, HERMETIC SEALED, TO-
Manufacturer Part Number: 2N4339Rohs Code: NoPart Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPart Package Code: BCYPackage Description: CYLINDRICAL, O-MBCY-W3Pin Count: 3ECCN Code: EAR99Manufacturer: Vishay IntertechnologiesRisk Rank: 5.03Additional Feature: LOW NOISECase Connection: GATEConfiguration: SINGLEDrain-source On Resistance-Max: 1700 ΩFET Technology: JUNCTIONFeedback Cap-Max (Crss): 3 pFJEDEC-95 Code: TO-206AAJESD-30 Code: O-MBCY-W3JESD-609 Code: e0Number of Elements: 1Number of Terminals: 3Operating Mode: DEPLETION MODEOperating Temperature-Max: 200 °CPackage Body Material: METALPackage Shape: ROUNDPackage Style: CYLINDRICALPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 0.3 WSubcategory: Other TransistorsSurface Mount: NOTerminal Finish: Tin/Lead (Sn/Pb)Terminal Form: WIRETerminal Position: BOTTOMTransistor Application: AMPLIFIERTransistor Element Material: SILICON Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA, HERMETIC SEALED, TO-18, 3 PIN