#Sanken, #2SD2083, #IGBT_Module, #IGBT, 2SD2083 Power Bipolar Transistor, 25A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-100, TO-3P,
Manufacturer Part Number: 2SD2083Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: SANKEN ELECTRIC CO LTDPart Package Code: TO-3PPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3ECCN Code: EAR99Manufacturer: Sanken Electric Co LtdRisk Rank: 1.75Additional Feature: BUILT IN BIAS RESISTANCE RATIO IS 0.05Collector Current-Max (IC): 25 ACollector-Emitter Voltage-Max: 120 VConfiguration: DARLINGTON WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 2000JESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 120 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Bipolar Transistor, 25A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-100, TO-3P, 3 PIN