#FUJI, #6DI50B_050, #IGBT_Module, #IGBT, 6DI50B-050 Power Bipolar Transistor, 50A I(C), 600V V(BR)CEO, 6-Element, NPN, Silicon, Plastic/Epoxy, 17 Pin; 6DI50B-050
Manufacturer Part Number: 6DI50B-050Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPackage Description: FLANGE MOUNT, R-PUFM-X17Manufacturer: Fuji Electric Co LtdRisk Rank: 5.82Case Connection: ISOLATEDCollector Current-Max (IC): 50 ACollector-Emitter Voltage-Max: 600 VConfiguration: COMPLEXDC Current Gain-Min (hFE): 100Fall Time-Max (tf): 4000 nsJESD-30 Code: R-PUFM-X17Number of Elements: 6Number of Terminals: 17Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNPower Dissipation Ambient-Max: 230 WPower Dissipation-Max (Abs): 230 WQualification Status: Not QualifiedRise Time-Max (tr): 3000 nsSubcategory: BIP General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Max (toff): 16000 nsTurn-on Time-Max (ton): 3000 ns Power Bipolar Transistor, 50A I(C), 600V V(BR)CEO, 6-Element, NPN, Silicon, Plastic/Epoxy, 17 Pin