#Microsemi, #APT50GR120L, #IGBT_Module, #IGBT, APT50GR120L Insulated Gate Bipolar Transistor, 117A I(C), 1200V V(BR)CES, N-Channel; APT50GR120L
Manufacturer Part Number: APT50GR120L
Rohs Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: MICROSEMI CORP
Manufacturer: Microsemi Corporation
Risk Rank: 5.64
Collector Current-Max (IC): 117 A
Collector-Emitter Voltage-Max: 1200 V
Gate-Emitter Thr Voltage-Max: 6.5 V
Gate-Emitter Voltage-Max: 30 V
Operating Temperature-Max: 150 °C
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 694 W
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Insulated Gate Bipolar Transistor, 117A I(C), 1200V V(BR)CES, N-Channel