Toshiba MG50J6ES50 IGBT Module

Toshiba MG50J6ES50 is a high power switching transistor module, designed for use in power conversion and motor control applications.

Toshiba MG50J6ES50 is one of MG series of insulated gate bipolar transistor (IGBT) modules. MG series IGBT modules are known for their high performance and reliability.

MG50J6ES50 features voltage rating 600V and current rating 50A. MG50J6ES50 has low on-state voltage drop and fast switching characteristics, which will help MG50J6ES50 to minimize power loss and improve efficiency.

This module housed in compact, fully isolated package which designed for easy installation and maintenance.

It is equipped with number of built-in protection features, including overcurrent protection and thermal shutdown, to help prevent damage to the device and the surrounding circuitry.

Toshiba MG50J6ES50 Description

High Power Switching Applications Motor Control Applications

. The electrodes are isolated from case.

. High input impedance.

. 6 IGBTs built into 1 package.

. Enhancement-mode.

. High speed : tf = 0.30µs (Max.) (IC = 50A)

trr = 0.15µs (Max.) (IF = 50A)

. Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 50A)

Collector-emitter voltage VCES 600 V

Gate-emitter voltage VGES ±20 V

Collector current DC IC 50 A

Collector current 1ms ICP 100 A

Forward current DC IF 50 A

Forward current 1ms IFM 100 A

Collector power dissipation (Tc = 25°C) PC 280 W

Junction temperature Tj 150 °C

Storage temperature range Tstg −40 ~ 125 °C

Isolation voltage VIsol  2500(AC 1 min.) V

Screw torque (Terminal / mounting) ― 2 / 3 N·m

High Power Switching Applications Motor Control Applications 50A/600V/IGBT/6U