#APT, #APT60M90JN, #IGBT_Module, #IGBT, APT60M90JN Power Field-Effect Transistor, 57A I(D), 600V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconduc
Manufacturer Part Number: APT60M90JNRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: ADVANCED POWER TECHNOLOGY INCPackage Description: FLANGE MOUNT, R-PUFM-X4Manufacturer: Advanced Power TechnologyRisk Rank: 5.68Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 600 VDrain Current-Max (Abs) (ID): 57 ADrain Current-Max (ID): 57 ADrain-source On Resistance-Max: 0.09 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 870 pFJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 690 WPower Dissipation-Max (Abs): 690 WPulsed Drain Current-Max (IDM): 228 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Power Field-Effect Transistor, 57A I(D), 600V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4