#Microsemi Power Products Group, #APTGF100A120T3WG, #IGBT_Module, #IGBT, APTGF100A120T3WG Insulated Gate Bipolar Transistor, 130A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP3, 25 PIN; A
Manufacturer Part Number: APTGF100A120T3WGRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: MICROSEMI CORPPackage Description: ROHS COMPLIANT, SP3, 25 PINPin Count: 25ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 5.63Case Connection: ISOLATEDCollector Current-Max (IC): 130 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X9Number of Elements: 2Number of Terminals: 9Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 657 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 130A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP3, 25 PIN