IGBT TECH

A comprehensive engineering comparison of Silicon (Si), Silicon Carbide (SiC), and Gallium Nitride (GaN) power semiconductors, focusing on reverse recovery, switching speed, and efficiency trade-offs.

Explore how high-speed IGBT switching in VFDs causes motor insulation failure. Learn the impact of long cables, dv/dt, and voltage reflections, and strategies to protect motors.

In industrial motor drives, reliability is paramount. Learn why Short Circuit Withstand Time (tSC) is the critical safety parameter protecting IGBTs from catastrophic failure during faults.

Explore the essential trade-off between Vce(sat) and Eoff in IGBT design. Learn why switching frequency dictates device selection and how to choose the right module for your application.

Learn to diagnose and prevent the top 3 IGBT module failures: short-circuit, over-temperature, and gate drive faults. A guide to improving power system design and reliability.

A technical white paper analyzing how IGBT modules and Intelligent Power Modules (IPMs) address thermal, electrical, and reliability challenges in high-density compute environments—from SpaceX’s orbital AI clusters to terrestrial power systems.

Explore how quantum computing and AI are driving rising demands for power electronics. Understand why IGBT modules matter in next-gen compute infrastructure.

Discover how AI’s rising power demand is reshaping global energy systems — and why IGBT modules are key to building the intelligent world’s power backbone.

Discover key IGBT market trends for 2025–2026 — global demand recovery, pricing shifts, and how SiC is reshaping the power electronics landscape.

Learn to optimize inverter efficiency by mastering the critical trade-off between Vce(sat) (conduction loss) and Eon/Eoff (switching loss) in 1200V IGBTs. This guide helps you select the ideal component for your industrial application.