IGBT TECH

Chopper is a power conversion technique in electric power control, which essentially involves pulse-width modulation of direct current. Its waveform resembles a chopping action, hence the name "chopper."

Clamping circuits are sometimes used in IGBT drive circuits. The main purpose is to protect IGBT devices and prevent operating parameters from exceeding the limit parameters of the collector or gate. Today we summarize the precautions for the design and use of Vce and Vge clamping circuits. Vce clamp circuit The purpose of the Vce […]

There is a small device that is rarely heard of in everyday life, but is indispensable in almost any place with electricity – the IGBT, the CPU of the electronic power industry. From consumer electronics, such as the Bluetooth headphones we use, laptop power adapters, and household frequency converters, to the frequency converters in elevators, […]

Called UCC5880-Q1, it is in pre-production and the full data sheet has not yet been made public. One novel feature that has been revealed is that the device has two parallel high-side drivers and two parallel low-side drivers for the following gate. In each case, one driver of a pair can deliver up to 5A […]

“The portfolio of discrete and integrated power stage devices provides designers with the necessary flexibility to meet their specific needs for industrial applications complying with JEDEC standards JESD47 and JESD22,” said the company. Available in DSO-20-85, DSO-20-87, HSOF-8-3, LSON-81- and TSON-8 packaging, Rds(on) values range from 42 to 340mΩ max. In the half-bridges, two GaN […]

Power semiconductors are the core of electrical energy conversion and Circuit control in electronic devices. They are mainly used to change voltage and frequency, DC and AC conversion in electronic devices, and are the core of electrical energy conversion and circuit control in electronic devices. There are many types of power semiconductor devices, which can […]

  IGBT (Insulated Gate Bipolar Transistor) is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor), which combines the high input impedance of MOSFET and GTR The low conduction pressure drop has two advantages. IGBT combines the advantages of the above two devices, with high […]

IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, is a composite fully controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), and has MOSFET The advantages of both the high input impedance and the low turn-on voltage drop of the GTR. The GTR saturation voltage is […]

Insulated Gate Bipolar Transistor (IGBT), also known as insulated gate transistor. Because it has a parasitic thyristor inside the IGBT, it can also be called an insulated gate thyristor. It is a new type of composite device developed in the mid-1980s. Because it combines the advantages of MOSFET and GTR, it has the advantages of […]

IGBT/power device   The IGBT module is a modular semiconductor product that is packaged by IGBT (Insulated Gate Bipolar Transistor Chip) and FWD (Freewheeling Diode Chip) through a specific circuit bridge; the packaged IGBT module is directly applied to the inverter and the UPS is uninterrupted. Power supply and other equipment; IGBT module has the […]