Content last revised on February 25, 2026
BSM100GAR120DN2 Infineon 1200V 100A IGBT Module
When designing high-frequency power conversion stages, engineers often face a critical trade-off: achieving the necessary switching speeds without incurring prohibitive thermal overhead from switching losses. The BSM100GAR120DN2, an Infineon (formerly Eupec) Fast-IGBT2 module, is specifically engineered to resolve this tension in chopper-based topologies. By integrating a 1200V, 100A (at Tc=80°C) switch with a fast-recovery diode in a standard 62mm footprint, it provides a robust platform for efficiency-critical systems. For designers building boost stages in solar or induction heating systems, the BSM100GAR120DN2 is the premier choice for minimizing switching dissipation.
UVP Statement: High-speed switching optimized for 1200V applications requiring minimized power dissipation in high-frequency topologies.
- Top Specs: 1200V | 100A (Tc=80°C) | Eoff 10.5mJ.
- Key Benefits: Lower cooling requirements; enhanced high-frequency performance.
What is the primary benefit of its Fast-IGBT2 technology? Significant reduction in Eoff losses, enabling higher switching frequencies compared to standard modules.
Frequently Asked Questions
Addressing Design Constraints in High-Frequency Power Stages
How does the Fast-IGBT2 technology in the BSM100GAR120DN2 impact the overall efficiency of a 20kHz boost converter?
The Fast-IGBT2 chip inside the BSM100GAR120DN2 is optimized for low switching losses (specifically Eoff). In a 20kHz converter, traditional standard-speed IGBTs would generate excessive heat during the turn-off phase. This module’s optimized Eoff (typically 10.5mJ) ensures that thermal energy is minimized, allowing for higher power density and potentially smaller Thermal Management solutions. This allows the system to operate cooler even at elevated switching frequencies.
Why is the "GAR" configuration specifically advantageous for brake chopper or boost PFC stages compared to standard half-bridge modules?
The "GAR" suffix denotes a specific chopper configuration where the IGBT and a fast-recovery diode are arranged for collector-side chopping. Unlike a standard half-bridge (GB), which contains two IGBTs, the BSM100GAR120DN2 focuses the module's thermal capacity on a single high-performance switch and its anti-parallel diode. This reduces complex gate-drive requirements for the second switch and optimizes the package for unidirectional energy flow, common in brake choppers and DC-bus boost stages.
Key Parameter Overview
Decoding the Specs for Enhanced Thermal Reliability
The following technical specifications represent the core electrical and thermal boundaries of the BSM100GAR120DN2, derived from the official Infineon documentation.
| Parameter Category | Specific Specification | Value (Standard Conditions) |
|---|---|---|
| Maximum Ratings | Collector-Emitter Voltage (Vces) | 1200V |
| Current Handling | Continuous DC Collector Current (Ic) | 100A at Tc=80°C (145A at Tc=25°C) |
| Switching Speed | Turn-off Energy Loss (Eoff) | 10.5mJ (typ. at 125°C) |
| Voltage Characteristics | Collector-Emitter Saturation Voltage (Vcesat) | 3.2V (at Ic=100A, Tvj=125°C) |
| Thermal Resistance | Thermal Resistance, Junction to Case (Rthjc) | 0.13 K/W |
| Package Type | Standard Footprint | 62mm Chopper Module |
Download the BSM100GAR120DN2 datasheet for detailed specifications and performance curves.
Technical Deep Dive
A Closer Look at the Fast-IGBT2 Chip for High-Frequency Optimization
The BSM100GAR120DN2 utilizes the second-generation Fast-IGBT technology. To visualize how this affects performance, imagine two vehicles stopping at a red light: a heavy freight truck and a sports car. A standard IGBT is like the truck—it has high current capacity but takes a "long tail" distance to come to a complete stop, dissipating a lot of energy as heat in the brakes. The Fast-IGBT2 in this module is the sports car; it is engineered to "stop" (turn off) abruptly, drastically shortening the current tail. In technical terms, this reduction in Switching Loss directly translates to less dissipated energy per cycle.
Furthermore, the Rthjc of 0.13 K/W is exceptionally low for this package size. This low thermal resistance acts like a high-bandwidth data pipe for heat, quickly moving thermal energy from the silicon junction to the heatsink. When combined with a Gate Drive optimized for high dv/dt, the BSM100GAR120DN2 provides a level of Thermal Management that allows designers to push the boundaries of system-level power density without risking desaturation or thermal runaway. For more information on these principles, see our guide on how an IGBT works.
Application Scenarios & Value
Achieving System-Level Benefits in High-Frequency Power Conversion
The BSM100GAR120DN2 is most effective in environments where efficiency and high-speed modulation are non-negotiable. Its 1200V rating makes it a staple for 400V AC line-connected equipment where voltage spikes are common.
- Variable Frequency Drives (VFD) & Brake Choppers: In heavy industrial hoisting or conveyor systems, braking energy must be dissipated to protect the DC bus. The BSM100GAR120DN2 handles the rapid pulsing required in brake chopper circuits with minimal thermal stress.
- Solar Inverter Boost Stages: In multi-string solar inverters, this module is used to step up varying string voltages to a constant DC bus. The high-speed switching allows for smaller inductors, reducing the overall weight and cost of the inverter.
- Induction Heating: The ability to operate at higher frequencies allows for precise control of the heating process in industrial metal tempering.
For systems requiring higher current handling in a similar configuration, the related BSM150GT120DN2 offers an increased Ic of 150A, while the BSM200GB120DN2 provides a half-bridge alternative for different circuit topologies. Understanding the nuances of IGBT vs MOSFET selection is crucial when deciding if the high-voltage capability of the BSM100GAR120DN2 fits your specific frequency requirements.
As the industry moves toward Industrial 4.0 and higher efficiency standards, selecting modules with proven SOA (Safe Operating Area) and low dynamic losses becomes a strategic advantage. This module ensures long-term reliability in UPS (Uninterruptible Power Supply) and medical imaging systems where downtime is not an option.
To ensure optimal performance in your next-generation power design, consult with a technical specialist regarding gate resistance selection and snubber circuit optimization. Our team provides the data you need for informed component evaluation.
Request pricing now for the BSM100GAR120DN2 to secure high-reliability components for your production schedule.